Title :
Complementary GaAs technology for a GHz microprocessor
Author :
Brown, R.B. ; Basso, T.D. ; Parakh, P.N. ; Gold, S.M. ; Gauthier, C.R. ; Lomax, R.J. ; Mudge, T.N.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A DARPA-funded project at the University of Michigan has as a goal the development of technologies and tools needed to implement microprocessors that can be clocked at GHz speeds. A Complementary GaAs HIGFET technology from the Motorola CS-1 facility (CGaAs) is the target semiconductor process. While this technology is immature, it is years ahead of CMOS in terms of fast gate delay at low power supply voltages. A major focus of this work is advanced packaging, which supports partitioning of the design into multiple integrated circuits, each having an integration level that should be achievable in CGaAs. This paper touches on the major aspects of the project, process technology, circuit design, packaging, architecture, CAD tools and software, with an emphasis on application of the CGaAs technology.
Keywords :
III-V semiconductors; circuit CAD; field effect digital integrated circuits; gallium arsenide; integrated circuit design; integrated circuit packaging; integrated circuit technology; microprocessor chips; multichip modules; timing; 617 MHz to 1 GHz; CAD tools; DARPA-funded project; GHz microprocessor; GHz speed clocking; GaAs; Motorola CS-1 facility; advanced packaging; architecture; circuit design; complementary GaAs technology; complementary HIGFET technology; fast gate delay; low power supply voltages; multiple integrated circuits; CMOS technology; Clocks; Delay; Gallium arsenide; Integrated circuit packaging; Integrated circuit technology; Low voltage; Microprocessors; Power supplies; Semiconductor device packaging;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567897