Title :
Periodic Transconductance Oscillations in Sub-100nm MOSFETs
Author :
Wirth, G. ; Hilleringmann, U. ; Horstmann, J. ; Goser, K.
Author_Institution :
Fed. University of Rio Grande do Sul e, Brazil
fDate :
22-24 September 1997
Keywords :
Doping; Fluctuations; MOS devices; MOSFET circuits; Potential well; Quantization; Silicon; Temperature measurement; Transconductance; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194445
