DocumentCode :
1910049
Title :
On the transconductance enhancement at low temperature in deep submicron MOSFETs
Author :
Szelag, B. ; Balestra, F.
Author_Institution :
ENSERG Grenoble, France
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
384
Lastpage :
387
Keywords :
Cryogenics; Linearity; MOSFETs; Numerical simulation; Silicon; Temperature dependence; Temperature distribution; Temperature measurement; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194446
Filename :
1503376
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1910049
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