Fabrication and characterization of lateral field emission device based on carbon nanotubes

Author

Tsai, C.C. ; Juan, C.P. ; Chen, K.J. ; Chen, K.H. ; Chen, L.C. ; Cheng, H.C.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2003

fDate

7-11 July 2003

Firstpage

235

Lastpage

236

Abstract

A lateral field emission device based on carbon nanotubes (CNTs) is proposed and the experimental results are reported. In this method, the distance between polysilicon anode and the CNTs cathode was determined by the wet etching process. Thus, the interelectrode gap is easily formed in good uniformity and reproducibility with dimensions below 1 micrometer. The CNTs were selectively grown with microwave plasma enhanced chemical vapor deposition system (MPCVD). The turn-on voltage of the fabricated device with interelectrode gap of 0.6 /spl mu/m is as low as 2 volt, and the emission current density is as high as 4 mA/cm at 20 volt. The emission current fluctuation is about /spl plusmn/15% for 2100 sec.

Keywords

anodes; carbon nanotubes; cathodes; current fluctuations; electron field emission; etching; nanotube devices; plasma CVD; 2 V; 20 V; 2100 sec; 6 micron; C; Si; carbon nanotubes; emission current density; emission current fluctuation; field emission device; interelectrode gap; microwave plasma enhanced chemical vapor deposition; polysilicon anode; wet etching; Anodes; Carbon nanotubes; Cathodes; Fabrication; Microwave devices; Plasma applications; Plasma chemistry; Plasma density; Reproducibility of results; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International

Conference_Location

Osaka, Japan

Print_ISBN

4-8181-9515-4

Type

conf

DOI

10.1109/IVMC.2003.1223070

Filename

1223070