Junctions design guidelines for 0.18um CMOS

Author

Gwoziecki, R. ; Skotnicki, T. ; Bouillon, P. ; Poncet, A.

Author_Institution

France Telecom - CNET, France

fYear

1997

fDate

22-24 September 1997

Firstpage

388

Lastpage

391

Keywords

Degradation; Guidelines; Immune system; Indium; Lithography; MOS devices; MOSFETs; Telecommunications; Testing; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1997. Proceeding of the 27th European

Print_ISBN

2-86332-221-4

Type

DOI

10.1109/ESSDERC.1997.194447

Filename

1503377

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