Title :
Junctions design guidelines for 0.18um CMOS
Author :
Gwoziecki, R. ; Skotnicki, T. ; Bouillon, P. ; Poncet, A.
Author_Institution :
France Telecom - CNET, France
fDate :
22-24 September 1997
Keywords :
Degradation; Guidelines; Immune system; Indium; Lithography; MOS devices; MOSFETs; Telecommunications; Testing; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194447
