Title :
Comparison between ultra-thin ZrO/sub 2/ and ZrO/sub x/N/sub y/ gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices
Author :
Nieh, R. ; Krishnan, S. ; Hag-ju Cho ; Chang Seok Kang ; Gopalan, S. ; Onishi, K. ; Choi, R. ; Lee, J.C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Both NMOSCAP and self-aligned NMOSFET devices using TaN gates were fabricated and characterized in order to compare ZrO/sub 2/ and nitrogen-incorporated ZrO/sub 2/ (ZrO/sub x/N/sub y/) gate dielectrics (EOT/spl sim/10.3/spl Aring/). ZrO/sub x/N/sub y/ devices demonstrated excellent thermal stability, comparable leakage current, higher breakdown field, decreased subthreshold swing, and improved drive current over ZrO/sub x/ devices. Polysilicon-gated NMOSCAPs were also fabricated to investigate the compatibility of ZrO/sub x/N/sub y/ with the poly process (EOT/spl sim/19/spl Aring/), but high leakage and TEM analysis revealed interaction between the poly and ZrO/sub x/N/sub y/.
Keywords :
MOS capacitors; MOSFET; dielectric thin films; electric breakdown; leakage currents; sputtered coatings; thermal stability; transmission electron microscopy; zirconium compounds; 10.3 A; 19 A; DC sputtering; EOT; TEM analysis; TaN; TaN-gated NMOSCAP; TaN-gated NMOSFET; ZrO/sub 2/; ZrO/sub x/N/sub y/; breakdown field; drive current; leakage current; polysilicon-gated NMOSCAPs; self-aligned NMOSFET devices; subthreshold swing; thermal stability; ultra-thin ZrO/sub 2/ gate dielectrics; ultra-thin ZrO/sub x/N/sub y/ gate dielectrics; Annealing; Artificial intelligence; Capacitance-voltage characteristics; Dielectrics; Hysteresis; Leakage current; Nitrogen; Temperature; Thermal stability; Very large scale integration;
Conference_Titel :
VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7312-X
DOI :
10.1109/VLSIT.2002.1015445
