Title :
Peculiarities of field electron emission from nitrogen-doped ultrananocrystalline diamond films
Author :
Karabutov, A.V. ; Konov, V.I. ; Vlasov, I.I. ; Pimenov, S.M. ; Loubnin, E.N. ; Carlisle, J.A. ; Gruen, D.M. ; Birrell, J.
Author_Institution :
Gen. Phys. Inst., Moscow, Russia
Abstract :
In this paper, we focus on field electron emission properties of nitrogen-doped ultrananocrystalline diamond (UNCD) films deposited on Si substrates are analysed. The film microstructure was studied using Raman spectroscopy, X-ray Photoelectron spectroscopy, Auger electron spectroscopy, and EELS.
Keywords :
Auger electron spectra; Raman spectra; X-ray photoelectron spectra; crystal microstructure; diamond; electron field emission; elemental semiconductors; nitrogen; semiconductor thin films; Auger electron spectroscopy; C:N/sub 2/; EELS; Raman spectroscopy; Si; Si substrates; X-ray Photoelectron spectroscopy; field electron emission; film microstructure; nitrogen-doped ultrananocrystalline diamond films; Chemistry; Conductive films; Electron emission; Laboratories; Materials science and technology; Nitrogen; Physics; Plasma measurements; Raman scattering; Spectroscopy;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1223071
