Transient Two-Dimensional Numerical Analysis of the Charge-Pumping Experiment

A transient model of the charge-pumping experiment on bulk MOSFET´s and SOI devices has been developed, It is based on the self-consistent numerical solution of the time-dependent basic semiconductor equations including the trap dynamics equations, assuming arbitrary voltage pulses at the terminals. In this paper some details of the approach are presented. The model is applied to study the non-ideal (geometric) components in the charge-pumping current for the two-dimensional cases. Additional applications of the presented charge-pumping simulation are pointed out.