Title :
Electron emission from CVD diamond film deposited on pre-seeded Si substrate with large area and low interface state density
Author :
Gu, C.Z. ; Yue, S.L. ; Dou, Y.
Author_Institution :
Inst. of Phys., Chinese Acad. of Sci., Beijing, China
Abstract :
In this paper, we report that the enhanced and stable electron emission at low applied fields is obtained from diamond deposited on pre-seeded mirror polished Si substrate by nanometer scale diamond powder in a microwave plasma CVD chamber. The deposition of diamond film with low interface state density. (a) seeding nanodiamond powder on Si substrate surface. (b) annealing for increasing the adhesion between diamond powder and substrate. (C) diamond growth. (d) H ion bombardment for decreasing film stress. Scanning electron microscopy (SEM), Raman spectroscopy and in-situ stress measurement are used to characterise the structure and properties of diamond film.
Keywords :
Raman spectra; adhesion; annealing; diamond; electron field emission; elemental semiconductors; internal stresses; ion beam effects; nanoparticles; plasma CVD coatings; scanning electron microscopy; semiconductor thin films; C; CVD diamond film deposited; H ion bombardment; Raman spectroscopy; SEM; Si; Si substrate; adhesion; annealing; diamond growth; electron emission; film stress; film structure; interface state density; microwave plasma CVD; nanometer scale diamond powder; scanning electron microscopy; Annealing; Electron emission; Interface states; Mirrors; Plasma density; Plasma stability; Powders; Scanning electron microscopy; Semiconductor films; Substrates;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1223072
