Field emission characteristics of CVD diamond thin films with SnO/sub 2/ as overlayer

Author

Koinkar, P.M. ; Mahajan, J.R. ; Patil, P.P. ; More, M.A.

Author_Institution

Dept. of Phys., North Maharashtra Univ., Jalgoan, India

fYear

2003

fDate

7-11 July 2003

Firstpage

245

Abstract

We have studied the field emission characteristics of CVD diamond thin films deposited on silicon substrate with tin-oxide (SnO/sub 2/) as a overlayer. The diamond thin films were synthesized by Hot Filament Chemical Vapour Deposition (HFCVD) method. The SnO/sub 2/ coating on silicon substrate was prepared using Spray Pyrolysis technique. The field emission current-voltage (I-V) measurements were performed in ´diode´ configuration at base pressure 1/spl times/10/sup -8/ torr. The CVD diamond films with SnO/sub 2/ overlayer exhibit better emission characteristics as compared to the normal CVD diamond films. Appearance of more number of emission sites there by leading to higher emission current has been observed in case of CVD diamond films with SnO/sub 2/ overlayer. Also the turn-on voltage, required to draw 0.1 /spl mu/A current, for such films was found to be /spl sim/40% less than that of the normal CVD diamond films. The surface roughness revealed by Atomic Force Microscopy (AFM) is 4 nm and 4.5 nm for normal and CVD films with SnO/sub 2/ overlayer respectively. The formation of SnO/sub 2/ coating on silicon substrate and nucleation and growth of diamond have been confirmed by X-ray Diffraction (XRD) and Raman Spectroscopy observations.

Keywords

CVD coatings; Raman spectra; X-ray diffraction; atomic force microscopy; diamond; electron field emission; elemental semiconductors; nucleation; semiconductor thin films; surface roughness; 4 nm; 4.5 nm; AFM; C; CVD diamond thin films; Raman Spectroscopy; Si-SnO/sub 2/; SnO/sub 2/ overlayer; X-ray Diffraction; XRD; atomic force microscopy; diode; field emission current-voltage; field emission properties; hot filament chemical vapour deposition; nucleation; spray pyrolysis technique; surface roughness; tin-oxide over layer; Atomic force microscopy; Chemical vapor deposition; Coatings; Current measurement; Pressure measurement; Semiconductor thin films; Silicon; Spraying; Sputtering; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International

Conference_Location

Osaka, Japan

Print_ISBN

4-8181-9515-4

Type

conf

DOI

10.1109/IVMC.2003.1223075

Filename

1223075