• DocumentCode
    1910220
  • Title

    Field-emission-display basic structure using Si-doped AlN

  • Author

    Taniyasu, Y. ; Kasu, Makoto ; Makimoto, T. ; Kobayashi, N.

  • Author_Institution
    NTT Basic Res. Labs., NTT Corp., Tokyo, Japan
  • fYear
    2003
  • fDate
    7-11 July 2003
  • Firstpage
    249
  • Lastpage
    250
  • Abstract
    In this paper we report the first demonstration of the basic structure of a field emission display (FED) using Si-doped AlN. It is characterised by AFM.
  • Keywords
    III-V semiconductors; aluminium compounds; atomic force microscopy; field emission displays; semiconductor devices; silicon; wide band gap semiconductors; AFM; AlN:Si; Si-doped AlN; field emission display basic structure; Anodes; Doping; Electrodes; Electron emission; Epitaxial growth; Epitaxial layers; Flat panel displays; Luminescence; Phosphors; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-8181-9515-4
  • Type

    conf

  • DOI
    10.1109/IVMC.2003.1223077
  • Filename
    1223077
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1910220