Title :
Field-emission-display basic structure using Si-doped AlN
Author :
Taniyasu, Y. ; Kasu, Makoto ; Makimoto, T. ; Kobayashi, N.
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Tokyo, Japan
Abstract :
In this paper we report the first demonstration of the basic structure of a field emission display (FED) using Si-doped AlN. It is characterised by AFM.
Keywords :
III-V semiconductors; aluminium compounds; atomic force microscopy; field emission displays; semiconductor devices; silicon; wide band gap semiconductors; AFM; AlN:Si; Si-doped AlN; field emission display basic structure; Anodes; Doping; Electrodes; Electron emission; Epitaxial growth; Epitaxial layers; Flat panel displays; Luminescence; Phosphors; Thermal conductivity;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1223077
