Super-resolution enhancement method with phase-shifting mask available for random patterns

Author

Misaka, A. ; Matsuo, T. ; Sasago, M.

Author_Institution

ULSI Process Technol. Dev. Center, Matsushita Electr. industrial Co. Ltd, Kyoto, Japan

fYear

2002

fDate

11-13 June 2002

Firstpage

200

Lastpage

201

Abstract

We propose new two phase shifting masks: centerline phase-shifting mask (CL-PSM) and outline phase-shifting mask (OL-PSM). CL-PSM enhances the DOF of line patterns more than alternating phase-shifting masks. OL-PSM drastically improves the resolution of the contact pattern compared with attenuated phase-shifting masks. Both CL-PSM and OL-PSM are classified as strong resolution enhancement technologies. Furthermore, they can be applied to random logic patterns without multiple exposures. They will allow us to make sub-65-nm node logic LSIs with ArF lithography, and will also be useful for VUV lithography.

Keywords

image resolution; phase shifting masks; ultraviolet lithography; ArF lithography; VUV lithography; centerline phase-shifting mask; contact pattern resolution; line pattern DOF; outline phase-shifting mask; phase-shifting masks; random logic patterns; random patterns; strong resolution enhancement technologies; super-resolution enhancement method; Apertures; Electron beams; Focusing; Large scale integration; Lighting; Lithography; Testing; Ultra large scale integration; Ultraviolet sources; Vacuum technology;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-7312-X

Type

conf

DOI

10.1109/VLSIT.2002.1015452

Filename

1015452