Title :
A performance comparison between 0.35um self-aligned and quasi-self-aligned double-polysilicon bipolar transistors
Author :
Ailloud, L. ; de Pontcharra, J. ; Bartoletti, G. ; Kirtsch, J. ; Auvert, G. ; Chantre, A.
Author_Institution :
SGS/Thomson Microelectronics, France and CEA-LETI, France
fDate :
22-24 September 1997
Keywords :
BiCMOS integrated circuits; Bipolar transistors; Boron; Dielectrics; Etching; Fabrication; Implants; Microelectronics; Silicon carbide; Telecommunications;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194453
