An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond

Author

Tsujikawa, S. ; Mine, T. ; Shimamoto, Yasuhiro ; Tonomura, O. ; Tsuchiya, R. ; Ohnishi, K. ; Hamamura, H. ; Torii, K. ; Onai, T. ; Yugami, J.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

2002

fDate

11-13 June 2002

Firstpage

202

Lastpage

203

Abstract

We demonstrate a SiN gate dielectric with oxygen-enriched interface (OI-SiN). A process in which oxygen atoms are incorporated after forming SiN provides enhanced nitrogen concentration and oxygen-enriched interface simultaneously even in the region of EOT < 1.5 nm. Thus we developed an OI-SiN gate dielectric with EOT of 0.9 nm that brought about low gate leakage current, good interface properties and excellent resistance to boron penetration.

Keywords

CMOS integrated circuits; MOSFET; carrier mobility; dielectric thin films; etching; interface states; leakage currents; silicon compounds; 0.9 nm; 50 nm; 50-nm CMOS devices; B penetration resistance; CMOS; FTIR; MOSFETs; O atom incorporation; O-enriched interface; SiN; SiN ultra-thin gate dielectric; SiON; XPS; carrier mobilities; enhanced N concentration; interface properties; low gate leakage current; wet etching; Absorption; Atomic layer deposition; Atomic measurements; Boron; Dielectric substrates; Leakage current; MOSFETs; Nitrogen; Silicon compounds; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-7312-X

Type

conf

DOI

10.1109/VLSIT.2002.1015453

Filename

1015453