Modeling the limits of gate oxide scaling with a Schrodinger-based method of direct tunneling gate currents of nanoscale MOSFETs

Author

Huang, Chung-Kuang ; Goldsman, Neil

Author_Institution

Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA

fYear

2001

fDate

2001

Firstpage

335

Lastpage

340

Abstract

Calculates gate currents of nanoscale MOSFETs with ultrathin gate oxides for different gate and drain biases by directly solving the Schrodinger, electron-Boltzmann, Poisson and hole-continuity equations. Computations give rise to a subband structure that is populated using the calculated distribution function. The resulting tunneling current versus gate voltage curves show oscillatory structure which reflects quantum effects

Keywords

Boltzmann equation; MOSFET; Poisson equation; Schrodinger equation; nanotechnology; semiconductor device models; tunnelling; Poisson equations; Schrodinger-based method; direct tunneling gate currents; distribution function; drain biases; electron-Boltzmann equations; gate biases; gate oxide scaling; gate voltage; hole-continuity equations; nanoscale MOSFETs; oscillatory structure; quantum effects; subband structure; ultrathin gate oxides; Boltzmann equation; Distribution functions; Educational institutions; Electrons; Leakage current; MOSFETs; Poisson equations; Schrodinger equation; Thermionic emission; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on

Conference_Location

Maui, HI

Print_ISBN

0-7803-7215-8

Type

conf

DOI

10.1109/NANO.2001.966444

Filename

966444