Title :
Modeling the limits of gate oxide scaling with a Schrodinger-based method of direct tunneling gate currents of nanoscale MOSFETs
Author :
Huang, Chung-Kuang ; Goldsman, Neil
Author_Institution :
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA
Abstract :
Calculates gate currents of nanoscale MOSFETs with ultrathin gate oxides for different gate and drain biases by directly solving the Schrodinger, electron-Boltzmann, Poisson and hole-continuity equations. Computations give rise to a subband structure that is populated using the calculated distribution function. The resulting tunneling current versus gate voltage curves show oscillatory structure which reflects quantum effects
Keywords :
Boltzmann equation; MOSFET; Poisson equation; Schrodinger equation; nanotechnology; semiconductor device models; tunnelling; Poisson equations; Schrodinger-based method; direct tunneling gate currents; distribution function; drain biases; electron-Boltzmann equations; gate biases; gate oxide scaling; gate voltage; hole-continuity equations; nanoscale MOSFETs; oscillatory structure; quantum effects; subband structure; ultrathin gate oxides; Boltzmann equation; Distribution functions; Educational institutions; Electrons; Leakage current; MOSFETs; Poisson equations; Schrodinger equation; Thermionic emission; Tunneling;
Conference_Titel :
Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-7215-8
DOI :
10.1109/NANO.2001.966444
