Title :
Correlation between electromigration damage kinetics and microstructure in Cu interconnects
Author :
Gladkikh, A. ; Karpovski, M. ; Palevski, A.
Author_Institution :
Department of Physical Electronics, Tel Aviv University, Israel
fDate :
22-24 September 1997
Keywords :
Compressive stress; Conductors; Electromigration; Energy measurement; Extraterrestrial measurements; Grain boundaries; Integrated circuit interconnections; Kinetic theory; Microstructure; Surface resistance;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194462
