Title :
Simulation studies of Negative Bias Temperature Instability in FinFETs using two-stage model
Author :
Narendiran, A. ; Bindu, B.
Author_Institution :
Dept. of Electron. & Commun. Eng, Coll. of Eng. Guindy Campus, Chennai, India
Abstract :
In this paper, we investigated the effect of Negative Bias Temperature Instability (NBTI) in FinFET devices. For the simulation studies, we used the two-stage model - an NBTI model, which describes accurately the behaviour of devices during stress and relax phase of NBTI. The effect of stress bias, initial concentration of oxygen vacancy precursors and temperature on NBTI degradation in FinFETs are analysed.
Keywords :
MOSFET; semiconductor device models; semiconductor device reliability; FinFET devices; NBTI degradation; NBTI model; negative-bias temperature instability; oxygen vacancy precursors; relax phase; simulation studies; stress bias; stress phase; two-stage model; Annealing; Capacitance-voltage characteristics; Hydrogen; Oxygen; Silicon; FinFET; NBTI; Reliability; degradation;
Conference_Titel :
Devices, Circuits and Systems (ICDCS), 2012 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4577-1545-7
DOI :
10.1109/ICDCSyst.2012.6188769
