Title :
Planar MIS type field emitter fabricated on epitaxial Al/Al/sub 2/O/sub 3//Si(111) structure
Author :
Kim, J.S. ; Hoshi, T. ; Sawada, K. ; Ishida, M.
Author_Institution :
Toyohashi Univ. of Technol., Japan
Abstract :
In this paper, we propose the fabrication of an MIS type field emitter using single crystal Al/sub 2/O/sub 3/ insulator and Al electrode on an n-type Si(111) substrate.
Keywords :
MIS structures; alumina; aluminium; elemental semiconductors; field emission; metallic epitaxial layers; molecular beam epitaxial growth; semiconductor epitaxial layers; silicon; Al electrode; Al-Al/sub 2/O/sub 3/-Si; MIS structures; epitaxial layers; n-type Si(111) substrate; planar MIS type field emitter; single crystal Al/sub 2/O/sub 3/ insulator; Annealing; Crystallization; Electrodes; Flat panel displays; Insulation; Molecular beam epitaxial growth; Scattering; Substrates; Surface morphology; Tunneling;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1223087
