• DocumentCode
    1910545
  • Title

    SiO2-nanoparticles enhancing Si band-edge electroluminescence to nearly lasing actions

  • Author

    Lin, Ching-Fuh ; Chung, Peng-Fei ; Chen, Miin-Jang ; Su, Wei-Fang

  • Author_Institution
    Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    358
  • Lastpage
    362
  • Abstract
    Electroluminescence (EL) at Si bandgap energy is significantly enhanced with the insertion of SiO2 nanoparticles in the oxide layer of the metal-oxide-silicon (MOS) structures on n-type Si. The nanoparticles have a size of 12 nm. The measured EL efficiency is enhanced to be near 10-4. Furthermore, near-lasing actions like the threshold behavior and resonance modes are observed. The reason is because nanoparticles cause the simultaneous localization of electrons and holes, making the process of the phonon-assisted radiative recombination of electron-hole pairs more like two-particle (exciton-phonon) collision than three-particle (electron-hole-phonon) collision. Thus the probability of radiative recombination increases to enhance EL at Si bandgap energy
  • Keywords
    MIS structures; electroluminescence; electron-hole recombination; elemental semiconductors; energy gap; localised states; nanostructured materials; nanotechnology; silicon; silicon compounds; 0.0001 percent; 12 nm; EL efficiency; MOS structures; Si bandgap energy; SiO2; SiO2 nanoparticles; SiO2-Si; SiO2-nanoparticle enhanced Si band-edge electroluminescence; electroluminescence; electron-hole pair; metal-oxide-silicon structures; n-type Si; nanoparticle size; near-lasing action; oxide layer; phonon-assisted radiative recombination; radiative recombination probability; resonance modes; simultaneous electron-hole localization; three-particle electron-hole-phonon collision; threshold behavior; two-particle exciton-phonon collision; Charge carrier processes; Electroluminescence; Nanoparticles; Photonic band gap; Power engineering and energy; Radiative recombination; Resonance; Semiconductor materials; Substrates; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on
  • Conference_Location
    Maui, HI
  • Print_ISBN
    0-7803-7215-8
  • Type

    conf

  • DOI
    10.1109/NANO.2001.966448
  • Filename
    966448
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1910545