DocumentCode
1910604
Title
A 500 MHz complementary gallium arsenide clock multiplier
Author
Mazzotta, V. ; Foster, D.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear
1996
fDate
3-6 Nov. 1996
Firstpage
321
Lastpage
324
Abstract
This paper reports a 500 MHz complementary gallium-arsenide (CGaAs/sup TM/) clock multiplier. The design was implemented in Motorola´s 0.7 /spl mu/m complementary gallium-arsenide (CGaAs/sup TM/) process. The goal was to demonstrate operation of an on-chip CGaAs/sup TM/ clock multiplier based on a phase-locked loop at low voltage. This design is similar to implementations that have been fabricated with silicon CMOS. However, CMOS implementations require feature sizes of 0.4 /spl mu/m to achieve the same performance as 0.7 /spl mu/m CGaAs/sup TM/. The design demonstrates the flexibility of this process to tune different sections of the circuitry to provide either high performance where necessary with greater than 500 MHz speeds using p-load DCFL designs, or much lower dynamic power consumption using complementary CMOS like designs. This paper discusses the design and implementation of the clock multiplier. Test results are presented. The design measures 1.21 mm/sup 2/, including the fully integrated passive filter. The clock multiplier can lock to and multiply reference signals between frequencies 3.2 MHz and 7.7 MHz. The power dissipation is 15 mW at an input frequency of 5 MHz and a power supply voltage of 1.2 V.
Keywords
III-V semiconductors; digital phase locked loops; direct coupled FET logic; field effect digital integrated circuits; frequency multipliers; gallium arsenide; timing circuits; 0.7 micron; 1.2 V; 15 mW; 3.2 to 7.7 MHz; 500 MHz; CGaAs process; GaAs; clock multiplier; complementary GaAs process; dynamic power consumption; fully integrated passive filter; low voltage operation; onchip multiplier; p-load DCFL designs; phase-locked loop; CMOS process; Clocks; Energy consumption; Flexible printed circuits; Frequency; Gallium arsenide; Low voltage; Phase locked loops; Silicon; Tuned circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location
Orlando, FL, USA
ISSN
1064-7775
Print_ISBN
0-7803-3504-X
Type
conf
DOI
10.1109/GAAS.1996.567899
Filename
567899
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