• DocumentCode
    1910612
  • Title

    Influence of short channel effects on microwave performances of AlGaAs/InGaAs HEMTs using Monte Carlo simulation

  • Author

    Dollfus, P. ; Bru, C. ; Galdin, S. ; Hesto, P.

  • Author_Institution
    Institut d´´Electronique Fondamentale - CNRS URA22, Université Paris-Sud - Bât. 220 - 91405 Orsay cedex - France
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    781
  • Lastpage
    784
  • Abstract
    The influence of reduction of gate length down to 50nm on microwave performances of HEMTs is studied using small-signal Monte Carlo simulations. Cutoff frequencies are determined and equivalent circuit models are deduced from Z parameters calculation. With a 100nm gate length a higher gm and a slightly lower fT are obtained than with a 50nm gate length.
  • Keywords
    Cutoff frequency; Equivalent circuits; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Monte Carlo methods; Steady-state; Transient analysis; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435407
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1910612