Title :
Physics and performances of accumulation-mode SOI p-MOSFET´s from low (77 K) to high (150-320°C) temperatures
Author :
Flandre, D. ; Terao, A. ; Loo, T. ; Colinge, J.-P.
Author_Institution :
Laboratoire de Microelectronique, Université Catholique de Louvain, Place du Levant 3, 1348 Louvain-la-Neuve Belgium; Senior Research Assistant of the National Fund for Scientific Research (FNRS), Belgium
Abstract :
A theoretical analysis of the physics of accumulation-mode SOI p-MOSFET´s is supported by new experimental data at room temperature, then extended to low (77 K) and high (150-320°C) temperature domains. The electrical performances of these devices under such temperature conditions are discussed and shown to be compatible with circuit requirements.
Keywords :
Conductive films; Doping; Low voltage; MOSFET circuits; Microelectronics; Physics; Semiconductor films; Temperature measurement; Threshold voltage; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
