Investigation of the Influence of the Film Thickness in Accumulation-Mode Fully-Depleted SIMOX MOSFET´s

An experimental analysis of the film thickness influence on the performance of accumulation-mode SIMOX MOSFETs is presented. The main parameters studied are the interface coupling occurring for very thin film and their influence on the main device parameters such as threshold voltage, subthreshold slope and holding voltage. Films as thin as 45 nm have been used to process experimental devices. Their behavior, mainly in the breakdown regime, demonstrates the interest of film thickness lowering to improve device characteristics.