• DocumentCode
    1910688
  • Title

    Investigation of the Influence of the Film Thickness in Accumulation-Mode Fully-Depleted SIMOX MOSFET´s

  • Author

    Faynot, O. ; Auberton-Hervé, A.J. ; Cristoloveanu, S.

  • Author_Institution
    LETI (CEA-Technologies Avancées), DMEL -CENG, BP85X, 38041 Grenoble Cedex, France.
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    807
  • Lastpage
    810
  • Abstract
    An experimental analysis of the film thickness influence on the performance of accumulation-mode SIMOX MOSFETs is presented. The main parameters studied are the interface coupling occurring for very thin film and their influence on the main device parameters such as threshold voltage, subthreshold slope and holding voltage. Films as thin as 45 nm have been used to process experimental devices. Their behavior, mainly in the breakdown regime, demonstrates the interest of film thickness lowering to improve device characteristics.
  • Keywords
    Electric breakdown; Hot carrier effects; MOSFETs; Microelectronics; Performance analysis; Semiconductor films; Semiconductor thin films; Silicon; Thin film devices; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435412
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1910688