Title :
Parameter extraction for the static and dynamic model of IGBT
Author :
Kim, Hyun-Suk ; Cho, Young-Ho ; Kim, S.-D. ; Choi, Y.-I.
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
Abstract :
An insulated gate bipolar transistor (IGBT) device model that can be easily implemented in SPICEII is proposed. The IGBT model parameters are extracted from the experimental results, which are easily obtained from the data book or terminal characteristic. The extracted parameters using this model are to simulate the dynamic IGBT model as well as the steady state model
Keywords :
SPICE; circuit analysis computing; digital simulation; insulated gate bipolar transistors; semiconductor device models; IGBT; SPICEII; dynamic model; insulated gate bipolar transistor; parameter extraction; static model; steady state model; Circuit simulation; Data mining; Diodes; Equations; Insulated gate bipolar transistors; Parameter extraction; Power electronics; SPICE; Semiconductor process modeling; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1993. PESC '93 Record., 24th Annual IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-1243-0
DOI :
10.1109/PESC.1993.471937
