• DocumentCode
    1910754
  • Title

    Characteristics of nMOS/GAA (Gate-All-Around) Transistors neal Threshold

  • Author

    Francis, P. ; Terao, A. ; Flandre, D. ; Van de Wielc, F.

  • Author_Institution
    Laboratoire de Microélectronique, Université Catholique de Louvain, Place du Levant 3, 1348 Louvain-la-Neuve, Belgium.
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    815
  • Lastpage
    818
  • Abstract
    Simulations of, drain Current and intrinsic gate capacitances of nMOS/GAA transistors are presented and compared with experimental results. On the basis of the insight they give into the unique behaviour of these devices, new hypotheses have emerged and yielded an analytical model valid around the threshold voltage.
  • Keywords
    Analytical models; Bridge circuits; Capacitance; Ice; MOS devices; MOSFETs; Microelectronics; Silicon on insulator technology; Threshold voltage; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1910754