Title :
Electro-thermal simulation of an IGBT PWM inverter
Author :
Mantooth, H. Alan ; Hefner, Allen R., Jr.
Author_Institution :
Analogy, Inc., Beaverton, OR, USA
Abstract :
A recently developed electro-thermal network simulation methodology is used to analyze the behavior of a full-bridge, pulse-width-modulated (PWM), voltage-source inverter which uses insulated gate bipolar transistors (IGBTs) as the switching devices. The electro-thermal simulations are performed using the Saber circuit simulator and include the control logic circuitry, the IGBT gate drivers, the physics-based IGBT electro-thermal model, and the thermal network component models for the power device silicon chips, packages, and heat sinks. It is shown that the thermal response of the silicon chip determines the IGBT temperature rise during the device switching cycle. The thermal response of the device TO247 package and silicon chip determines the device temperature rise during a single phase of the 60-Hz sinusoidal output. Also, the thermal response of the heat sink determines the device temperature rise during the system start-up and after load impedance changes. It is also shown that the full electro-thermal analysis is required to accurately describe the power losses and circuit efficiency
Keywords :
PWM invertors; bridge circuits; circuit analysis computing; digital simulation; driver circuits; heat sinks; insulated gate bipolar transistors; power semiconductor switches; switching circuits; 60 Hz; IGBT PWM inverter; IGBT gate drivers; Saber circuit simulator; TO247 package; circuit efficiency; control logic circuitry; electro-thermal network simulation methodology; full-bridge; heat sinks; insulated gate bipolar transistors; load impedance; power device silicon chips; power losses; sinusoidal output; switching cycle; switching devices; thermal response; voltage-source inverter; Analytical models; Circuit simulation; Heat sinks; Insulated gate bipolar transistors; Packaging; Pulse inverters; Pulse width modulation inverters; Silicon; Temperature; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1993. PESC '93 Record., 24th Annual IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-1243-0
DOI :
10.1109/PESC.1993.471938