• DocumentCode
    1910845
  • Title

    Development of the Next Generation of Insulated Gate Bipolar Tranistors based on Trench Technology

  • Author

    Udrea, F. ; Chan, S.S.M. ; Thomson, J. ; Keller, S. ; Amaratunga, G.A.J. ; Millington, A.D. ; Waind, P.R. ; Crees, D.E.

  • Author_Institution
    University of Cambridge, UK
  • fYear
    1997
  • fDate
    22-24 September 1997
  • Firstpage
    504
  • Lastpage
    507
  • Keywords
    Breakdown voltage; Capacitors; Cathodes; Doping profiles; Dry etching; Electric breakdown; Geometry; Insulated gate bipolar transistors; Insulation; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194476
  • Filename
    1503406
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1910845