Title :
SiGe-Base Bipolar Transistors for Cryogenic BiCMOS Applications
Author :
Cressler, John D.
Author_Institution :
Alabama Microelectronic Science and Technology Center, Electrical Engineering Department, 200 Broun Hall, Auburn University, Auburn, AL 36849, USA
Abstract :
We demonstrate that the cryogenic (e.g., 77K=LNT) properties of SiGe-base heterojunction bipolar transistors and circuits are sufficiently advanced to warrant a serious consideration of the merits of cryogenic BiCMOS technologies for future LNT computer applications. In this paper we review the features of epitaxial SiGe-base bipolar technologies which make them particularly Suitable for LNT operation, examine the DC and dynamic properties of SiGe-base transistors operating at low temperatures, highlight the profile design constraints unique to the LNT environment, and discuss future research directions and opportunities.
Keywords :
BiCMOS integrated circuits; Bipolar transistor circuits; Bipolar transistors; CMOS technology; Computer applications; Cooling; Cryogenics; Germanium silicon alloys; Microelectronics; Silicon germanium;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
