Title :
Energy spread measurement of electrons from field emitter array for ion beam neutralization
Author :
Ishikawa, J. ; Gotoh, Y. ; Nakamura, K. ; Tsuji, H. ; Matsuda, K. ; Nagai, N. ; Sakai, S. ; Ikejiri, T. ; Umisedo, S. ; Hamamoto, N.
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
Abstract :
In this paper, the use of a field emitter array as an electron source for the charge neutralization of ion beam was proposed. Si was preferred as an emitter material because minimum contamination was expected for the preparation of silicon devices such as LSI. The energy spread of the extracted electrons from electron source were measured.
Keywords :
electron sources; elemental semiconductors; field emitter arrays; semiconductor devices; silicon; LSI; Si; charge neutralization; electron source; electrons energy spread measurement; field emitter array; ion beam neutralization; silicon devices; Contamination; Electron beams; Electron emission; Electron sources; Energy measurement; Field emitter arrays; Ion beams; Large scale integration; Pollution measurement; Silicon devices;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1223101
