Abstract :
Summary form only given. By using p-styrenesulfonic acid to dope polyaniline, we prepared post-polymerizable polyaniline-p styrenesulfonic acid composite. The composite was synthesized by mixing p-styrenesulfonic acid and polyaniline that was dedoped in NH/sub 4/OH aqueous solution. Polyaniline was re-doped by this procedure. The chemical structure of the composite was confirmed by IR and UV/visible spectroscopies. The composite was soluble in N-methylpyrrolidone and the films were prepared by casting the solution on a glass plate, Usual radical initiators, such as benzoyl peroxide, 2, 2´ azobisisobutyronitrite and general photoinitiator, could polymerize the vinyl groups in the composite. However, polyaniline was partially damaged by the radical polymerization process. We prepared a cast film of the composite on ITO coated glass plate for stud´&S in metallpolymerjunctions. Current-voltage characteristics of the Al/composite film/ITO diodes (contact area 0.5 cm x 1.0 cm) showed rectification prop@rties. The reverse leakage current density of the junction j/sub 0/ was 3.3X10/sup -4/ A cm/sup -2/ and the barrier height 0/sub b/, was 0.62 eV.
