DocumentCode :
1910942
Title :
Photoconductive terahertz microprobes for high-resolution contact-free imaging of large-scale sheet conductivity distributions
Author :
Nagel, Michael ; Safiei, A. ; Matheisen, Christopher ; Sawallich, Simon ; Pletzer, Tobias M. ; Kurz, H.
Author_Institution :
AMO GmbH, Aachen, Germany
fYear :
2013
fDate :
12-16 May 2013
Firstpage :
1
Lastpage :
1
Abstract :
Recently, the demand for non-destructive contact-free measurement tools which are able to measure conductivity distributions at spatial resolutions down to a few micrometres has strongly increased. This demand is caused by an increased application of micron-scale doping areas in solar cells (e.g. selective emitter structures fabricated by laser-doping [1]) and further semiconductor applications. Although, scanning-type (AFM-based) microscope solutions have been reported even with resolutions down to 100 nm [2, 3] a main drawback of this methods still is the limitation to small scan areas and (optically) flat samples. Several optical solutions (VIS or IR) like the recently presented confocal microphotoluminescence may offer micron-scale resolution and applicability to large-scale samples but they also suffer from strong scattering artefacts on rough samples and cross-sensitivity to carrier-lifetime. This is leading to data misinterpretations on samples with inhomogeneous carrier-lifetime distributions like for example present on laser-processed (locally melted and re-crystallized) surfaces. In this work a recently introduced approach based on the photoconductive (PC) near-field detection of terahertz (THz) light transmission [4] is demonstrated for the first time for sheet conductivity imaging on rough laser-doped multicrystalline silicon samples featuring doping microstructures.
Keywords :
atomic force microscopy; carrier lifetime; crystal microstructure; elemental semiconductors; infrared spectra; laser materials processing; light transmission; melting; nondestructive testing; photoconductivity; photoluminescence; recrystallisation; rough surfaces; semiconductor doping; semiconductor growth; sheet materials; silicon; surface conductivity; surface roughness; terahertz wave spectra; visible spectra; Si; atomic force microscopy; conductivity distributions; confocal microphotoluminescence; cross-sensitivity; data misinterpretations; doping microstructures; high-resolution contact-free imaging; infrared spectra; inhomogeneous carrier-lifetime distributions; large-scale sheet conductivity distributions; laser doping; laser-processed surfaces; locally melted surfaces; micron-scale doping; micron-scale resolution; nondestructive contact-free measurement; optical solutions; optically flat samples; photoconductive near-field detection; photoconductive terahertz microprobes; recrystallized surfaces; rough laser-doped multicrystalline silicon samples; rough samples; scanning-type AFM-based microscope solutions; scattering artefacts; selective emitter structures; semiconductor applications; sheet conductivity imaging; solar cells; spatial resolutions; terahertz light transmission; visible spectra; Conductivity; Conductivity measurement; Laser excitation; Measurement by laser beam; Semiconductor device measurement; Surface emitting lasers; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4799-0593-5
Type :
conf
DOI :
10.1109/CLEOE-IQEC.2013.6800787
Filename :
6800787
Link To Document :
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