• DocumentCode
    1910967
  • Title

    Temperature dependence (300-600K) of parasitic bipolar effects in SOI-MOSFETs

  • Author

    Reichert, G. ; Raynaud, C. ; Faynot, O. ; Balestra, F. ; Cristoloveanu, S.

  • Author_Institution
    ENSERG, France
  • fYear
    1997
  • fDate
    22-24 September 1997
  • Firstpage
    520
  • Lastpage
    523
  • Keywords
    Bipolar transistors; Electric breakdown; Impact ionization; Leakage current; MOSFETs; Silicon devices; Silicon on insulator technology; Temperature dependence; Temperature distribution; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194480
  • Filename
    1503410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1910967