Title :
Temperature dependence (300-600K) of parasitic bipolar effects in SOI-MOSFETs
Author :
Reichert, G. ; Raynaud, C. ; Faynot, O. ; Balestra, F. ; Cristoloveanu, S.
Author_Institution :
ENSERG, France
fDate :
22-24 September 1997
Keywords :
Bipolar transistors; Electric breakdown; Impact ionization; Leakage current; MOSFETs; Silicon devices; Silicon on insulator technology; Temperature dependence; Temperature distribution; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194480
