DocumentCode
1910995
Title
Dynamic floating body effects in PD SOI MOSFETs biased in the kink region
Author
Perron, L. ; Hamaguchi, C. ; Lacaita, A. ; Maegewa, M. ; Yamaguchi, Y.
Author_Institution
Osaka University, Japan and Politecnico di Milano Italy
fYear
1997
fDate
22-24 September 1997
Firstpage
524
Lastpage
527
Keywords
Impact ionization; Leakage current; MOSFET circuits; Semiconductor films; Silicon; Steady-state; Substrates; Switches; Switching frequency; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN
2-86332-221-4
Type
conf
DOI
10.1109/ESSDERC.1997.194481
Filename
1503411
Link To Document