Title :
The atomic fabrication of a silicon based quantum computer
Author :
Simmons, M.Y. ; Schofield, S.R. ; O´Brien, J.L. ; Curson, N.J. ; Clark, R.G. ; Buehle, T.M. ; McKinnon, R.P. ; Brenner, R. ; Reilly, D.J. ; Dzurak, A.S. ; Hamilton, A.R.
Author_Institution :
Dept. of Phys., New South Wales Univ., Kensington, NSW, Australia
Abstract :
Presents recent results on two different approaches to realize a solid-state quantum computer based in silicon, using phosphorus atoms as qubits. In the first approach the device is built from the ´bottomup´ using a combination of atomic lithography with a scanning tunneling microscope and high quality silicon epitaxial growth using molecular beam epitaxy. In the second approach ion implantation is used to implant the phosphorus atoms from the ´top-down´. In both cases surface control electrodes are fabricated by conventional electron beam lithography. Techniques for qubit read-out utilising coincidence measurements on twin single electron transistors are also presented
Keywords :
electron beam lithography; elemental semiconductors; ion implantation; molecular beam epitaxial growth; phosphorus; quantum computing; scanning tunnelling microscopy; silicon; single electron transistors; Si:P; atomic fabrication; atomic lithography; coincidence measurements; electron beam lithography; ion implantation; molecular beam epitaxy; quantum computer; qubits; scanning tunneling microscope; surface control electrodes; twin single electron transistors; Atomic beams; Atomic layer deposition; Epitaxial growth; Fabrication; Lithography; Microscopy; Quantum computing; Silicon; Solid state circuits; Tunneling;
Conference_Titel :
Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-7215-8
DOI :
10.1109/NANO.2001.966469