Title :
Improved triple resonant tunneling-diodes Using Inx, Ga1-xAs/GaAs/AlAs strained layers
Author :
Lippens, D. ; Nagle, J. ; Grimbert, B. ; Sadaune, V. ; Lheurette, E. ; Vinter, B. ; Tilmant, P. ; François, M.
Author_Institution :
Institut d´´Electronique et de Microelectronique du Nord, DHS Universit?e des Sciences et Technologies de Lille 59655 VILLENEUVE D´´ASCQ C?edex
Abstract :
Pseudomorphic Inx, Ga1-x As/GaAs/AlAs resonant tunneling diodes have been fabricated in a microwave compatible technology and tested. The epilayers were designed in a triple well configuration in order to improve the electrical performances of diodes used as harmonic multipliers. The devices exhibited excellent DC characteristics with peak-to-valley current ratios as high as 7:1 along with peak current densities of 50 kA/cm2 at 300K. RF evaluation yields a negative impedance level of - 30 ¿ at 40 GHz which is the highest frequency for a direct measurement in the negative differential resistance region.
Keywords :
Current density; Diodes; Electrical resistance measurement; Gallium arsenide; Impedance; Microwave devices; Microwave technology; Radio frequency; Resonant tunneling devices; Testing;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
