• DocumentCode
    1911070
  • Title

    Low-Frequency Noise Characteristics of Advanced Si and SiGe Bipolar Transistors

  • Author

    Gabl, R. ; Aufinger, K. ; Beock, K. ; Meister, T.F.

  • Author_Institution
    Siemens AG, Austria
  • fYear
    1997
  • fDate
    22-24 September 1997
  • Firstpage
    536
  • Lastpage
    539
  • Keywords
    Bipolar transistors; Cutoff frequency; Degradation; Germanium silicon alloys; Low-frequency noise; Noise generators; Noise measurement; Resistors; Silicon germanium; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194484
  • Filename
    1503414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1911070