DocumentCode :
1911091
Title :
Generation of four negative differential resistance regions using two resonant tunnelling diodes
Author :
Fobelets, K. ; Genoe, J. ; Vounck, R. ; Borghs, G.
Author_Institution :
Vrije Universiteit Brussel, ETRO, Pleinlaan 2, B-1050 Brussel, Belgium; IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
fYear :
1992
fDate :
14-17 Sept. 1992
Firstpage :
887
Lastpage :
890
Abstract :
In this paper we report on the experimental observation of four negative differential resistance regions in the current-voltage characteristic of a monolithically integrated seriesconnection of two resonant tunneling diodes at room temperature. An equivalent circuit of the seriesconnection is proposed which gives an explanation of the experimental results. The required current-voltage characteristics of the two resonant tunneling diodes in the seriesconnection, to generate the multiple negative resistance regions, are discussed. Simulations based on the equivalent circuit, show the possibility of five negative differential resistance regions with a monolithically integrated seriesconnection of two resonant tunneling diodes.
Keywords :
Circuit testing; Contact resistance; Diodes; Equivalent circuits; Gallium arsenide; RLC circuits; Resonant tunneling devices; Switching circuits; Thermal resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
Print_ISBN :
0444894780
Type :
conf
Filename :
5435428
Link To Document :
بازگشت