DocumentCode :
1911111
Title :
Control of steep Boron profiles in Si/SiGe heterojunction bipolar transistors
Author :
Heinemann, B. ; Knoll, D. ; Fischer, G. ; Krüger, D. ; Lippert, G. ; Osten, H.J. ; Rücker, H. ; Röpke, W. ; Schley, P. ; Tillack, B.
Author_Institution :
Institute for Semiconductor Physics, Germany
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
544
Lastpage :
547
Keywords :
Annealing; Boron; Epitaxial layers; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Molecular beam epitaxial growth; Physics; Pollution measurement; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194486
Filename :
1503416
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1911111
