• DocumentCode
    1911162
  • Title

    GaAs Schottky Gate bipolar transistors for high voltage power switching applications

  • Author

    Johnson, C.M. ; Hossin, M. ; O´Neill, A.G.

  • Author_Institution
    University of Newcastle, UK
  • fYear
    1997
  • fDate
    22-24 September 1997
  • Firstpage
    548
  • Lastpage
    551
  • Keywords
    Anodes; Bipolar transistors; Buffer layers; Current density; Doping; Gallium arsenide; Implants; Insulated gate bipolar transistors; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194487
  • Filename
    1503417
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1911162