DocumentCode :
1911197
Title :
Self-Consistent Modelling of Charge Storage Effects in Resonant Tunnel Diodes
Author :
Redhammer, R. ; Alisopp, D.W.E.
Author_Institution :
Department of Electronics, University of York, York, England YO1 5DD; Dept. of Microelectronics, Slovak Technical University, Bratislava,Czecho-Slovakia funded under TEMPUS Project JEP 1565-91.
fYear :
1992
fDate :
14-17 Sept. 1992
Firstpage :
899
Lastpage :
902
Abstract :
It is shown from self-consistent calculation that the tunnelling current through double barrier resonant tunnel diodes can be varied by introducing a third barrier to the structure and injecting a control current into the space between it and the double barrier. The third barrier causes a space charge build up and this influences the potential distribution through the device in such a way that the tunnel current can be controlled.
Keywords :
Current density; Diodes; Electrodes; Electron emission; Microelectronics; Poisson equations; Quantum mechanics; Resonance; Resonant tunneling devices; Space charge;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
Print_ISBN :
0444894780
Type :
conf
Filename :
5435431
Link To Document :
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