Title :
Surface recombination velocity measurement in SPEG SOS MOSFETs by bipolar gain characterisation
Author :
Stevens, P.B. ; Patel, C.J. ; Kerr, J.A. ; Shaw, C.
Author_Institution :
Middlesex University, UK
fDate :
22-24 September 1997
Keywords :
Charge pumps; Contacts; Epitaxial growth; FETs; Gain measurement; MOSFETs; Radiative recombination; Solids; Threshold voltage; Velocity measurement;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194489
