Title :
Electro-mechanical properties of single crystal silicon nano wire
Author :
Toriyama, Toshiyuki ; Funai, Daisuke ; Sugiyama, Susumu
Author_Institution :
New Energy & Ind. Technol. Dev. Organ., Tokyo, Japan
Abstract :
A p-type Si nano wire piezoresistor, whose minimum cross sectional area is 53nm × 53nm, was fabricated by combination of thermal diffusion, electron beam (EB) direct writing and RIE. Maximum value of longitudinal piezoresistance coefficient πl[011] of the Si nano wire piezoresistor is found to be 48 × 10-5 (1/MPa) at impurity concentration of 5 × 1019 (cm-3), and it has enough sensitivity for mechanical sensor application. Longitudinal piezoresistance coefficient πl[011] of the Si nano wire piezoresistor enhanced up to 46% with a decrease in the cross sectional area, while transverse piezoresistance coefficient πl[011] decreased with a decrease in the cross sectional area. An extremely small piezoresistive cantilever for SPM has been proposed by using the nano wire piezoresistor. The proposed piezoresistive cantilever has relatively high sensitivity, and possibility to replace with the optical technique in SPM
Keywords :
elemental semiconductors; microsensors; nanotechnology; piezoresistive devices; resistors; scanning probe microscopy; silicon; sputter etching; thermal diffusion; 53 nm; MEMS; RIE; SPM; Si; electromechanical properties; electron beam direct writing; longitudinal piezoresistance coefficient; mechanical sensor application; p-Si piezoresistor; piezoresistive cantilever; reactive ion etching; scanning probe microscopy; single crystal Si nano wire; thermal diffusion; transverse piezoresistance coefficient; Electron beams; Impurities; Mechanical sensors; Optical sensors; Piezoresistance; Scanning probe microscopy; Silicon; Ultraviolet sources; Wire; Writing;
Conference_Titel :
Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-7215-8
DOI :
10.1109/NANO.2001.966477
