DocumentCode
1911229
Title
High-Speed Integrated Quantum Well Self-Electrooptic Effect Device
Author
Tolstikhin, V.I.
Author_Institution
Institute of Radio Engineering & Electronics, Russian Academy of Science, 18, Marx Avenue, 103907, Moscow, Russia
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
903
Lastpage
906
Abstract
The novel high-speed integrated SEED-like bistable element with the light controlled shape of the power transfer characteristics is proposed.
Keywords
Gallium arsenide; High speed integrated circuits; Lighting control; Microelectronics; P-i-n diodes; Photonic band gap; Power engineering and energy; Radio control; Shape control; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435432
Link To Document