Title :
High-Speed Integrated Quantum Well Self-Electrooptic Effect Device
Author :
Tolstikhin, V.I.
Author_Institution :
Institute of Radio Engineering & Electronics, Russian Academy of Science, 18, Marx Avenue, 103907, Moscow, Russia
Abstract :
The novel high-speed integrated SEED-like bistable element with the light controlled shape of the power transfer characteristics is proposed.
Keywords :
Gallium arsenide; High speed integrated circuits; Lighting control; Microelectronics; P-i-n diodes; Photonic band gap; Power engineering and energy; Radio control; Shape control; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
