DocumentCode
1911250
Title
Quantum electron ad optoelectonic devices
Author
Capasso, Federico
Author_Institution
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
909
Lastpage
916
Abstract
Recent advances in quantum devices are reviewed. Transistors based on resonant tunneling promise to greatly reduce circuit complexity in certain analog and digital applications. Prototype multiplier and parity generator circuits which illustrate this point have been demonstrated. The final section of this paper discusses recent results on AlGaAs/GaAs quantum well infrared photodetectors (QWIP) and focal plane arrays and the potential of this technology vis-a-vis HgCdTe based detectors at ¿~10 ¿m.
Keywords
Circuits; Complexity theory; Electrons; Gallium arsenide; Infrared detectors; Photodetectors; Prototypes; Resonant tunneling devices; Sensor arrays; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435433
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