Title :
High power heterojunction GaAs switch IC with P-1 dB of more than 38 dBm for GSM application
Author :
Masuda, M. ; Ohbata, N. ; Ishiuchi, H. ; Onda, K. ; Yamamoto, R.
Author_Institution :
Semicond. Div., NEC-Kansai Corp., Shiga, Japan
Abstract :
A high power handling of 4 W and low control voltage of +3/0 V GaAs Switch IC, available for the hand-held phone unit for GSM dual and triple mode applications, has been successfully developed. As a basic switch element, heterojunction FET technology has been applied. The optimized stacked-structure with a dual-gate-FET and a triple-gate-FET has demonstrated high linearity of Pin-Pout with a P-1 dB (Pin) of more than 38 dBm, an insertion loss of less than 0.6 dB and an isolation of more than 22 dB in a wide frequency range of 0.5 GHz to 2.0 GHz.
Keywords :
III-V semiconductors; UHF integrated circuits; cellular radio; field effect analogue integrated circuits; field effect transistor switches; gallium arsenide; power integrated circuits; power semiconductor switches; switching circuits; 0.5 to 2 GHz; 0.6 dB; 3 V; 4 W; GSM application; GaAs; GaAs HFET switch IC; RF signal switching; dual mode application; dual-gate-FET; hand-held phone unit; heterojunction FET technology; high linearity; high power switch IC; optimized stacked-structure; triple mode application; triple-gate-FET; Application specific integrated circuits; FETs; GSM; Gallium arsenide; Heterojunctions; Isolation technology; Linearity; Low voltage; Switches; Voltage control;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722680
