Title :
Enhanced Breakdown Voltage and Charge to Breakdown of Collector Implant-Gate Oxide-Poly Capacitors by Selective Epitaxial Growth
Author :
Leipold, D. ; Hechtl, Ch. ; Schiekhofer, M. ; Puchert, T. ; Krick, J. ; Proetel, D.
Author_Institution :
Texas Instruments Gmbh, Germany
fDate :
22-24 September 1997
Keywords :
BiCMOS integrated circuits; Breakdown voltage; CMOS technology; Capacitors; Electric breakdown; Epitaxial growth; Implants; Protection; Resists; Signal processing;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194492
