• DocumentCode
    1911316
  • Title

    Enhanced Breakdown Voltage and Charge to Breakdown of Collector Implant-Gate Oxide-Poly Capacitors by Selective Epitaxial Growth

  • Author

    Leipold, D. ; Hechtl, Ch. ; Schiekhofer, M. ; Puchert, T. ; Krick, J. ; Proetel, D.

  • Author_Institution
    Texas Instruments Gmbh, Germany
  • fYear
    1997
  • fDate
    22-24 September 1997
  • Firstpage
    568
  • Lastpage
    571
  • Keywords
    BiCMOS integrated circuits; Breakdown voltage; CMOS technology; Capacitors; Electric breakdown; Epitaxial growth; Implants; Protection; Resists; Signal processing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194492
  • Filename
    1503422
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1911316