Development of a GaAs-based monolithic surface acoustic wave integrated chemical microsensor

Author

Baca, A.G. ; Heller, E.J. ; Hietala, V.M. ; Casalnuovo, S.C. ; Frye, G.C. ; Klem, J.F. ; Drummond, T.J.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1998

fDate

1-4 Nov. 1998

Firstpage

233

Lastpage

236

Abstract

An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other RF applications.

Keywords

III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; UHF oscillators; VHF oscillators; chemical sensors; feedback oscillators; gallium arsenide; integrated circuit technology; microsensors; surface acoustic wave delay lines; surface acoustic wave oscillators; surface acoustic wave sensors; 200 to 470 MHz; GaAs; GaAs MESFET electronics; GaAs-based integrated microsensor; RF applications; SAW MESFET oscillator; SAW delay lines; monolithic SAW integrated microsensor; oscillator technology; surface acoustic wave chemical microsensor; Acoustic waves; Chemical sensors; Chemical technology; Delay lines; Frequency; Gallium arsenide; MESFETs; Microsensors; Oscillators; Surface acoustic waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual

Conference_Location

Atlanta, GA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5049-9

Type

conf

DOI

10.1109/GAAS.1998.722681

Filename

722681