Laser emission from semiconductor microcavities: transition from nonperturbative to perturbative regimes

Author

Hailin Wang ; Xudong Fan ; Hou, H.Q. ; Hammons, B.E.

Author_Institution

Dept. of Phys., Oregon Univ., Eugene, OR, USA

fYear

1998

fDate

8-8 May 1998

Firstpage

29

Lastpage

30

Abstract

Summary form only given.We present experimental studies of laser emission in the nonperturbative regime in a GaAs quantum well (QW) microcavity. By tuning the cavity resonance to the low energy side of the inhomogeneous exciton distribution, we are able to achieve laser emission at exciton densities well below the exciton saturation density at which cavity polaritons vanish.

Keywords

III-V semiconductors; excitons; gallium arsenide; microcavity lasers; polaritons; quantum well lasers; resonant states; spectral line breadth; GaAs; GaAs QW microcavity; GaAs quantum well lasers; cavity polaritons; exciton densities; exciton saturation density; inhomogeneous exciton distribution; laser cavity resonance tuning; laser emission; nonperturbative regimes; perturbative regimes; semiconductor microcavities; Excitons; Laser theory; Laser transitions; Laser tuning; Microcavities; Optical scattering; Physics; Quantum well lasers; Resonance; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-541-2

Type

conf

DOI

10.1109/IQEC.1998.680080

Filename

680080