DocumentCode :
1911348
Title :
"Microwave memory effect" of activated water and aqueous KOH solution
Author :
Walczak, Rafal ; Dziuban, Jan
Author_Institution :
Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol., Poland
Volume :
1
fYear :
2004
fDate :
17-19 May 2004
Firstpage :
253
Abstract :
A "microwave memory effect" of the microwave activation of water and aqueous fluids has been discovered and studied. It has been found that microwave irradiation caused significant changes of the water structure in comparison to non-irradiated. The outline of the mechanism of the observed effect has been discussed. It has been assumed that microwave irradiation broke the hydrogen bond in a cluster-like water structure. As an effect, free water molecules, as well as hydroxyl ions, are generated. The technical application of the described effect - a new method of fast wet orientation dependent etching of silicon - has been studied. The potential dangerous consequences of the "microwave memory effect" have been discussed as well as technical applications in chemistry and microsystems techniques.
Keywords :
etching; hydrogen bonds; oxygen compounds; silicon; water; activated water; aqueous KOH solution; chemistry; cluster-like water structure; free water molecules; hydrogen bond; hydroxyl ions; microsystems techniques; microwave activation; microwave irradiation; microwave memory effect; silicon etching; wet orientation dependent etching; Capacitive sensors; Conductivity; Crystallization; Electromagnetic heating; Electromagnetic wave absorption; Infrared spectra; Microwave ovens; Sensor arrays; Silicon; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwaves, Radar and Wireless Communications, 2004. MIKON-2004. 15th International Conference on
Print_ISBN :
83-906662-7-8
Type :
conf
DOI :
10.1109/MIKON.2004.1356910
Filename :
1356910
Link To Document :
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