Title :
Enhanced hot-carrier induced degradation in STI isolated NMOS transistors
Author :
Sallagoity, P. ; Labiadh, A. ; Alieu, J. ; Haond, M.
Author_Institution :
SGS-Thomson Microelectronics, France
fDate :
22-24 September 1997
Keywords :
CMOS technology; Degradation; Etching; Hot carriers; Isolation technology; MOSFETs; Silicon; Stress; Telecommunications; Testing;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194494
